Interaction of Bis-diethylaminosilane with a Hydroxylized Si (001) Surface for SiO2 Thin-Film Growth Using Density Functional Theory
نویسندگان
چکیده
/ SUl\'lMARY We studied the interaction of Bis~diethylaminosilane (SiH2[N(C1HShh. BDEAS) with a hydroxylized Si (001) surface for Si01 thin-film growth using density functional theory (DFf). BDEA5 was adsorbed on the 5i surface and reacted with the H atom of hydroxyl (-OH) to produce the di-ethylaminosilane (-SiHl[N(C2HShl. DEAS) group and di-ethylamine (NH(C2HSh. DEA). Then. DEAS was able to react with another H atom of -OH to produce DEA and to form the 0-(5iH2)-0 bond at the imer-dimer. imer-row. or intra-dimer site. Among the three different sites. the intra-dimer site was the most probable when it came 10 forming the O-(SiH2)-O bond. key words: lI/omic layer deposition. Bis-dietl1ylamil1osilal1e. densitY/llnctiona/rheory. Si02
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عنوان ژورنال:
- IEICE Transactions
دوره 94-C شماره
صفحات -
تاریخ انتشار 2011